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IXYS
Electrical Characteristics
High Side Gate Driver Circuit
IXS839 / IXS839A / IXS839B
T A = -40°C to 85°C, V DD = 5V, 4V < V BST < 26V
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
High Side Gate-Driver
On-Resistance, Sourcing
Current
R HGD_SRC
V BST – V SW = 4.6V
2.2
?
High Side Gate-Driver
On-Resistance, Sinking
Current
High Side Gate-Driver (1)
Rise-Time
High Side Gate-Driver (1)
Fall-Time
Propagation Delay (1)
R HGD_SNK
t R_HGD
t F_HGD
t PD_HGD1
t PD_HGD2
V BST – V SW = 4.6V
C LOAD = 3nF
T R_HGD measured from 10% to
90% of (V HGD - V SW )
C LOAD = 3nF
T F_HGD measured from 90% to
10% of (V HGD - V SW )
C LOAD_HGD = C LOAD_LGD = 3nF
C DLY = 0pF
1.2
20
15
35
50
?
nS
nS
nS
nS
Low Side Gate Driver Circuit
T A = -40°C to 85°C, V DD = 5V, 4V < V BST < 26V
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Low Side Gate-Driver
On-Resistance, Sourcing
Current
R LGD_SRC
V DD – V PGND = 4.6V
2
?
Low Side Gate-Driver
On-Resistance, Sinking
Current
Low Side Gate-Driver (1)
Rise-Time
Low Side Gate-Driver (1)
Fall-Time
Propagation Delay (1)
R LGD_SNK
t R_LGD
t F_LGD
t PD_LGD1
t PD_LGD2
V DD – V PGND = 4.6V
C LOAD = 3nF
T R_LGD measured from 10% to
90% of (V LGD – V PGND )
C LOAD = 3nF
T F_LGD measured from 90% to
10% of (V LGD - V SW )
C LOAD_HGD = C LOAD_LGD = 3nF
C DLY = 0pF
1
18
12
60
20
?
nS
nS
nS
nS
Shut Down Circuit Characteristics
T A = -40°C to 85°C, V DD = 5V, 4V < V BST < 26V
Parameter
Propagation Delay (2)
Propagation Delay (2)
Propagation Delay (3)
Propagation Delay (3)
Symbol
t PD_LGDSD1
t PD_LGDSD2
t PD_GDSD1
t PD_GDSD2
Conditions
Min
Typ
25
10
400
800
Max
50
20
800
1200
Unit
nS
nS
nS
nS
*Notes:
(1) See Timing Diagram in Figure 4
(2) See Timing Diagram in Figure 5
(3) See Timing Diagram in Figure 6
5
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